Permanent threshold voltage (Vth) drift, induced by Bias Temperature Instability (BTI), constitutes one of the critical reliability challenges facing silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET). However, existing in-situ monitoring methods face significant challenges related to intrusiveness and strong coupling with junction temperature (Tj). Based on this, this article proposes an innovative Vth measurement method based on differential-mode (DM) conducted electromagnetic interference (EMI). This pioneering approach enables online Vth monitoring decoupled from Tj, utilizing DM EMI signals for the first time. This non-invasive method enables the identification of impending faults, thereby facilitating early monitoring of BTI-driven degradation in SiC MOSFET.
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