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The International Technology Roadmap for Wide Bandgap Power Semiconductors


About this Program

In 2015, the International Roadmap for Wide Bandgap Power Semiconductors (ITRW) was co-initiated by PELS and organizations representing China, Europe, Japan, the UK, and the USA. WBG material-based power devices have been available to engineers for many years. Silicon carbide (SiC) and gallium nitride (GaN) devices have superior characteristics and will eventually become pervasive in the major application areas of power electronics. However, displacing an existing technology with new and better technology is disruptive and never easy. The history of technological change shows it is necessary to accelerate the transition from Si to WBG devices, such as SiC and GaN. The ITRW helps to foster and promote the research, education, innovations, and applications of WBG technologies globally by providing a reliable and comprehensive view of the strategic research agenda and technology roadmap and working closely with industry, academia, and relevant roadmap organizations.


The International Technology Roadmap for Wide Bandgap Power Semiconductors (ITRW) will provide reference, guidance, and services to identify the future research and technology developments of wide bandgap (WBG) power semiconductors and their application, and thereby provide a reliable and comprehensive view of the Strategic Research Agenda and Technology Roadmap.

Helpful Information
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Learn More About the Need for ITRW

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Access the Roadmap


Our Leadership

Victor Veliadis

Victor Veliadis
Power America and North Carolina State University, USA


Past Chair

Peter Wilson
University of Bath, UK


Guoqi Zhang
TU Delft, Netherlands

Executive Secretary

Jing Zhang
Heraeus, Germany

Executive Secretary

Christina DiMarino
Virginia Tech, USA

Industry Advisory Board


Peter Friedrichs
Infineon, Germany


Dan Kinzer
Navitas, USA

Working Group Chairs

Materials and Devices Chair

Andrew Binder
Sandia National Laboratories, USA

Materials and Devices Co-Chair

Victor Veliadis
North Carolina State University, USA

Packing and Integration Chair

Lee Empringham
University of Nottingham, UK

Packing and Integration Co-Chair

Daniel Shi
ASTRI, Hong Kong

System Integration and Application: GaN Chair

Fred Wang
University of Tennessee, USA

System Integration and Application: GaN Co-Chair

Sibylle Dieckerhoff
TU Berlin, Germany

System Integration and Application: GaN Co-Chair

Laili Wang
Xi’an Jiaotong University, China

System Integration and Application: SiC Chair

Jin Wang
Ohio State University, USA

System Integration and Application: SiC Chair

Chaobo Dai
GEIRI, China

Program Highlights


How to Get Involved

To become a contributing member of the ITRW, please provide a brief, one-page resume showing your technical background and how it qualifies you to make a contribution to the development of the ITRW. Be sure to indicate the area of the roadmap activity that you would like to concentrate your contribution. The PELS ITRW grop will then forward this information to the appropriate contact within the ITRW.

For any questions, please send an email to the PELS ITRW group.