President's Message: March 2019
Moving Forward With the Baton
by Frede Blaabjerg
From 1985 to 1987, I was a master’s student at Aalborg University, Denmark, working with power electronics and field vector-oriented control of electrical drives. The switching frequency was 20 kHz to make the drive silent, and we were using a combination of MOSFETs and bipolar transistors to obtain such speed in the power stage. Simultaneously, by sampling around 5 kHz, the processor was pushed to the limit by using the Assembler software. At that time, all of the technology we utilized was the state of the art. Read More...
- NEW! PELS Prize PhD Thesis (P3 Talk) Video Competition
In Memoriam Manfred Depenbrock
On 30th of January 2019, Prof. emer. Dr. -Ing. Manfred Depenbrock passed away in Bochum, having...
IEEE Power Electronics Society Awards, Call for Nominations: Deadline March 31
IEEE Power Electronics Society Awards Call for Nominations Deadline March 31st 2019 The IEEE Power...
In Memoriam Prof. Bob Lorenz
To: All WEMPEC Friends, Alumni, and Past Visitors It is with great sadness that I write to inform...
Calling all Creative Minds! ECCE 2020 Logo Competition
Your talent beyond energy conversion also matters. We are excited to announce an ECCE 2020 Logo...
CyberPELS 2019 Workshop in Knoxville, TN
Cybersecurity of power electronics is increasingly essential as more systems from electrical...
APEC Plenary Session live-stream!
If you are not able to attend APEC in person this year, you can still participate in one of our...
YP Reception at APEC 2019
Are you a student or a young professional? IEEE Power Electronics Society (PELS) and Industry...
PSMA Magnetics Committee and IEEE PELS High Frequency Magnetics Workshop @APEC2019
Power Magnetics @ High Frequency Date: Saturday March 16, 2019 Anaheim, California IEEE PSMA...
WIE Breakfast at APEC 2019
Join us - WIE Breakfast at APEC 2019 Wednesday, 20 March 20198:00- 9:00 amRoom: Platinum...
IEEE PELS Mentoring Round Tables: APEC 2019
Anaheim Convention Center Ballroom E 800 W Katella Avenue Anaheim CA 92802 Phone: 714-765-8950...
Are you ready to take your understanding of blockchain to the next level? Join us for a live, virtual event
Are you ready to take your understanding of blockchain to the next level?Join us for a live,...
Upcoming Webinar: Gallium Nitride Power Devices: Switching Characteristics, Gate Drivers and Applications
Thur, Mar 28, 2019 08:30 AM EST
Presenters: Dr. Han Peng, HUAZHONG University of Science & Technology
Abstract – Gallium Nitride and Silicon Carbide are two representative materials for the third generation wide bandgap semiconductor. Gallium Nitride power transistors have higher electron mobility than SiC, making them superior devices for high frequency and efficient switching. The lateral HEMT device structure is also a more suitable topology for power integration together with driver and control blocks to achieve a ultra-high power density module and system. Read More...
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Current sharing technologies for LLC resonant converters
Technology Development from the More Electric Aircraft to All Electric Flight
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Resilient and Sustainable Distribution Systems with Advanced Microgrids
Big data gets physical
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