President's Message: March 2019

Frede BlaabjergMoving Forward With the Baton

 by Frede Blaabjerg

From 1985 to 1987, I was a master’s student at Aalborg University, Denmark, working with power electronics and field vector-oriented control of electrical drives. The switching frequency was 20 kHz to make the drive silent, and we were using a combination of MOSFETs and bipolar transistors to obtain such speed in the power stage. Simultaneously, by sampling around 5 kHz, the processor was pushed to the limit by using the Assembler software. At that time, all of the technology we utilized was the state of the art.  Read More...

 

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Upcoming Events

Upcoming Webinar: Gallium Nitride Power Devices: Switching Characteristics, Gate Drivers and Applications

Thur, Mar 28, 2019 08:30 AM EST

Presenters: Dr. Han Peng,  HUAZHONG University of Science & Technology


Han Peng

Abstract – Gallium Nitride and Silicon Carbide are two representative materials for the third generation wide bandgap semiconductor. Gallium Nitride power transistors have higher electron mobility than SiC, making them superior devices for high frequency and efficient switching. The lateral HEMT device structure is also a more suitable topology for power integration together with driver and control blocks to achieve a ultra-high power density module and system. Read More...

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