GaN-based power semiconductor devices are ideally suited for high-efficiency power converters due to their superior material properties [1]. GaN HEMTs have been incorporated into numerous commercial power supply designs, catering
Permanent threshold voltage (Vth) drift, induced by Bias Temperature Instability (BTI), constitutes one of the critical reliability challenges facing silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET). However, existing in-situ monitoring
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Dual-Active-Bridge (DAB) has emerged as one of the important isolated dc–dc converters due to its bidirectional power flow capability, simple architecture, and ability to achieve zero voltage switching (ZVS) over
