Chips Act(s)—2.0 and Beyond [Industry Pulse]
This decade has seen the restructuring of the global semiconductor supply chain. Market forces such as the race for electric vehicles (EVs) and artificial intelligence (AI) have clashed with geopolitical
This decade has seen the restructuring of the global semiconductor supply chain. Market forces such as the race for electric vehicles (EVs) and artificial intelligence (AI) have clashed with geopolitical

One of the things I love most about camping in Yosemite is the towering granite outcroppings like El Capitan. Granite rates a seven on the Mohs hardness scale, making it

Weight reduction is a mission-critical challenge in UAV electric propulsion, where every gram saved directly impacts payload and endurance. This article demonstrates how GaN-based inverters, enabling switching frequencies up to

Silicon/silicon carbide (Si/SiC ) hybrid switches, which combine advantages of Si and SiC under varying loads, have been a preferred solution to achieve cost-performance trade-off for traction inverters [1], [2].
In the last three years since ChatGPT launched, interest in AI (Artificial Intelligence) and especially in LLMs (Large Language Models) has exploded—driving, if not innovation, plenty of buzz and the

Artificial intelligence (AI) is not just a future trend; it is a current disruptor transforming how power is generated, delivered, and used. In power electronics, AI’s impact accelerates innovation while

In a ceremony at the University of Arkansas (UA), U.S. Representative Steve Womack, Arkansas State Attorney General Tim Griffin, Dean of the College of Engineering Dr. Kim Needy, Chancellor Charles

GaN-based power semiconductor devices are ideally suited for high-efficiency power converters due to their superior material properties [1]. GaN HEMTs have been incorporated into numerous commercial power supply designs, catering
From new product releases to supply chain shifts, the last few years have brought some new momentum to the GaN market, which is projected to rapidly expand over the next

Permanent threshold voltage (Vth) drift, induced by Bias Temperature Instability (BTI), constitutes one of the critical reliability challenges facing silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET). However, existing in-situ monitoring