Power MOS has been widely used in power converters. This is due to its characteristics of easy driving [1], fast switching speed [2], low on-state resistance [3], etc. According to
GaN-based power semiconductor devices are ideally suited for high-efficiency power converters due to their superior material properties [1]. GaN HEMTs have been incorporated into numerous commercial power supply designs, catering
Permanent threshold voltage (Vth) drift, induced by Bias Temperature Instability (BTI), constitutes one of the critical reliability challenges facing silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET). However, existing in-situ monitoring
