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Double-Pulse Testing Solution Evaluates the Switching Performance of SiC- and GaN-Based Power Devices

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Power Electronics Magazine Staff
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Double pulse testing is a method for evaluating the switching performance of SiC and GaN based power devices, and in this video an engineer explains a solution developed by Rohde & Schwarz and PE-Systems. Offering a stable and accurate approach using the R&S MXO 5 oscilloscope from Rohde & Schwarz along with the R&S RT-ZISO, users can perform accurate, reliable and fast double pulse testing on 1200 V SiC devices.

The R&S MXO 5 series provides insight into circuit behavior, with a 15.6″ HD capacitive touchscreen and a bandwidth at four channels of 350 MHz to 2 GHz, and 100 MHz to 2 GHz at eight channels. It has an update rate of 4.5 million wfms/s and a spectrum of over 50k FFT/s. Additional features include 18-bit vertical resolution, 12-bit ADC, and 10-bit ENOB, with a zone trigger on analog, spectrum and math, with a standard memory of 500 Mpoints per channel. The R&S RT-ZISO isolated probing system offers accuracy, sensitivity, dynamic range and bandwidth for wide bandgap power designs with SiC and GaN.

https://youtu.be/ja5HKl42fU8

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