Suzhou, China based gallium nitride on-silicon (GaN-on-Si) startup Innoscience Technology, the producer of high performance, normally-off e-mode GaN-on-Si FETs, has announced the official launch of its international operations in the
Last December, Italian startup Eggtronic unveiled an innovative, proprietary power architecture that significantly improves the efficiency of ac-dc converters while reducing its size. Labeled QuarEgg+, it is specifically developed to
While battery electric vehicles (BEVs) are powered by large lithium-ion (Li-ion) battery packs, consumers will be surprised to know that the conventional 12 V lead-acid battery also continues to be
Employing space qualified gallium nitride (GaN) FETs from a third party GaN supplier, Arlington, VA based CAES, a major provider of mission critical electronics for aerospace and defense applications, has
Using patented digital technology, East Greenwich, R.I. based manufacturer of power distribution products has developed a novel method of distributing high power efficiently over long distances using standard data cables.
This year, during APEC 2021, the virtual exposition unveiled several high-voltage gallium nitride (GaN) FETs from old and new players in the market. Key amongst them was Power Integrations, a
El Segundo, CA based gallium nitride (GaN) power ICs supplier Navitas Semiconductor has announced the launch of its third generation (3G) GaNFast power IC with integrated proprietary GaNSense technology. According
