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Tag: Field-effect Transistors

Name: TC 9 Monthly Meeting
Start: 2026-01-06T15:00:00-05:00
End: 2026-01-06T16:00:00-05:00

Threshold Voltage Monitoring Method for SiC MOSFET Based on DM EMI Signals

Permanent threshold voltage (Vth) drift, induced by Bias Temperature Instability (BTI), constitutes one of the critical reliability challenges facing silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET). However, existing in-situ monitoring

January 15, 2026