Mission: The International Technology Roadmap for Wide Bandgap Power Semiconductors (ITRW) will provide reference, guidance, and services to identify the future research and technology developments of wide bandgap (WBG) power semiconductors and their application, and thereby provide a reliable and comprehensive view of the Strategic Research Agenda and Technology Roadmap.
In 2015, the ITRW was co-initiated by PELS and organizations representing China, Europe, Japan, the UK, and the USA. WBG material-based power devices are becoming available to engineers for many years. Silicon carbide (SiC) and gallium nitride (GaN) devices have superior characteristics compared to Si and will eventually become pervasive in the major application areas of power electronics. However, displacing an existing technology with new and better technology is disruptive and never easy. The history of technological change shows it is necessary to accelerate the transition from Si to WBG devices, such as SiC and GaN. ITRW is dedicated to fostering and promoting the research, education, innovations, and applications of WBG technologies globally by providing a reliable and comprehensive view of the strategic research agenda and technology roadmap. This is done by working closely with industry, academia, and relevant roadmap organizations.
Accessing ITRW Documents
The following are the Chapters within the ITRW Roadmap:
- Executive Summary
- Wide Bandgap Power Electronics
- Wide Bandgap Power Devices Adoption on the Rise
- Roadmap for WBG and UWBG Materials and Devices
- Roadmap for GaN Applications
- Roadmap for SiC Applications
- Roadmap for WBG Packaging and Integration
- Design Automation for Wide Bandgap Power Electronics
- Future Challenges/Future Vision
- Roadmap Pathways
- Product Showcases