Abstract: Double-sided cooled (DSC) power modules enable high power density for medium-voltage converter applications. By utilizing Wide Bandgap (WBG) devices, these modules notably minimize switching losses by effectively handling rapid switching transients. This webinar will address the design, fabrication, and operational challenges associated with a 400 V / 61 A Gallium Nitride High Electron Mobility Transistors (GaN HEMT) DSC epoxy resin Insulated Metal Substrate (eIMS) based power module. This power module integrates GaN devices, gate drivers, power decoupling, and gate bypass capacitors into a compact and power-dense configuration. The discussion will cover the electro-thermo-mechanical design steps aimed at reducing Electromagnetic Susceptibility and enhancing thermo-mechanical operational cycles. Additionally, the webinar will focus on electrical layout techniques to achieve low parasitic inductances and the intelligent distribution of coupling capacitances. To deepen understanding, capacitance and impedance models will be examined, illustrating how intelligent coupling capacitance distribution within the power modules can lead to a significant reduction in common mode currents, a critical factor in Electromagnetic Interference (EMI) performance optimization. Moreover, the webinar will assess the reliability of thermo-mechanical stress distribution within the module package, addressing various substrate dielectric materials and evaluating key performance metrics—including thermal resistance, stress on both the die and solder layer, as well as the performance during power cycling. Finally, we will discuss the fabrication and final assembly steps for the GaN power module, including a brief overview of panel-level manufacturing using the eIMS approach for large-scale production.
