ITRW
About this Program
In 2015, the International Roadmap for Wide Bandgap Power Semiconductors (ITRW) was co-initiated by PELS and organizations representing China, Europe, Japan, the UK, and the USA. WBG material-based power devices have been available to engineers for many years. Silicon carbide (SiC) and gallium nitride (GaN) devices have superior characteristics and will eventually become pervasive in the major application areas of power electronics. However, displacing an existing technology with new and better technology is disruptive and never easy. The history of technological change shows it is necessary to accelerate the transition from Si to WBG devices, such as SiC and GaN. The ITRW helps to foster and promote the research, education, innovations, and applications of WBG technologies globally by providing a reliable and comprehensive view of the strategic research agenda and technology roadmap and working closely with industry, academia, and relevant roadmap organizations.
Mission
The International Technology Roadmap for Wide Bandgap Power Semiconductors (ITRW) will provide reference, guidance, and services to identify the future research and technology developments of wide bandgap (WBG) power semiconductors and their application, and thereby provide a reliable and comprehensive view of the Strategic Research Agenda and Technology Roadmap.
LEADERSHIP
Our Leadership
CHAIR
Victor Veliadis
Power America and North Carolina State University, USA
Leaders
Past Chair
Peter Wilson
University of Bath, UK
Secretary-General
Guoqi Zhang
TU Delft, Netherlands
Executive Secretary
Jing Zhang
Heraeus, Germany
Executive Secretary
Christina DiMarino
Virginia Tech, USA
Industry Advisory Board
Chair
Peter Friedrichs
Infineon, Germany
Co-Chair
Dan Kinzer
Navitas, USA
Working Group Chairs
Materials and Devices Chair
Andrew Binder
Sandia National Laboratories, USA
Materials and Devices Co-Chair
Victor Veliadis
North Carolina State University, USA
Packing and Integration Chair
Lee Empringham
University of Nottingham, UK
Packing and Integration Co-Chair
Daniel Shi
ASTRI, Hong Kong
System Integration and Application: GaN Chair
Fred Wang
University of Tennessee, USA
System Integration and Application: GaN Co-Chair
Sibylle Dieckerhoff
TU Berlin, Germany
System Integration and Application: GaN Co-Chair
Laili Wang
Xi’an Jiaotong University, China
System Integration and Application: SiC Chair
Jin Wang
Ohio State University, USA
System Integration and Application: SiC Chair
Chaobo Dai
GEIRI, China
Program Highlights
Getting
Involved
How to Get Involved
To become a contributing member of the ITRW, please provide a brief, one-page resume showing your technical background and how it qualifies you to make a contribution to the development of the ITRW. Be sure to indicate the area of the roadmap activity that you would like to concentrate your contribution. The PELS ITRW grop will then forward this information to the appropriate contact within the ITRW.
For any questions, please send an email to the PELS ITRW group.