Upcoming Webinars

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 Flux Modulation Machines

Different from regular PM machines, flux modulation machines are with different stator and rotor pole numbers, and produce steady torque based on the so called flux modulation effect. The special operation principle makes flux modulation machines high-torque density and low-pulsation torque, and more design freedoms lead to many novel machine topologies for different applications. This webinar will be a summarized presentation of Flux Modulation Machines: from principle, features to topologies. After a short introduction, the Webinar will focus on machine family definition and difference with traditional machines, operation principles, and topologies. After introducing three machine major components: flux modulator, armature and excitation field, different flux modulation machine topologies will be introduced based on different rotating components. Common features will be summarized, main concerns and challenges will also be discussed. At the end, analyses, designs, and prototypes of vernier machines, a flux-modulation machine family member, will be demonstrated.

Ronghai Qu received his B.E. and M.S. degrees from Tsinghua University, Beijing, China, and the Ph.D. degree from University of Wisconsin-Madisonall in electrical engineering. He had been with the General Electric (GE) Global Research Center (GRC), Niskayuna, NY as a Senior Electrical Engineer from 2003 to 2010. He was the recipient of 11 GEGRC awards including EPST Technical Achievement Award and Management Award. In 2010 he joined Huazhong University of Science & Technology, Wuhan, China as a titled professor. He is currentlythe member of academic degrees committee, director of State and Province Joint Engineering Research Center of Novel Electrical Machines, director of Center for Advanced Electrical Machines and Drives (CAEMD), and deputy director of State Key Laboratory of Advanced Electromagnetic Engineering and Technology. He is an IEEE fellow and the chair of IEEE Industry Application Society (IAS) Wuhan Chapter. His research interests include Design, Drive and Control of Electrical Machines. He has published over 250 technical papersincluding 5 IEEEaward papers and holds over 100patents

 

 

SiC Power Device Fundamentals

The presentation will discuss major SiC power device application areas and touch on foundry models, cost reduction strategies, and path to commercialization. The advantages of SiC over other power electronic materials will be outlined, and SiC devices developed for power electronic applications will be introduced. Emphasis will be placed on SiC MOSFETs, which are currently being inserted in the majority of SiC based power electronic systems. Aspects of device fabrication will be summarized, stressing processes that do not carry over from the mature Si manufacturing world and are thus specific to SiC. Finally, the presentation will highlight common SiC Edge Termination techniques, which allow power devices to reach their full high-voltage potential. 

Dr. Victor Veliadis is Deputy Executive Director and CTO of Power America, which is a U.S Department of Energy wide bandgap power electronics public-private Manufacturing Institute. Dr. Veliadis manages a budget in excess of $30 million per year that he strategically allocates to over 35 industrial, University, and National-Laboratory projects, to enable US leadership in WBG power electronics manufacturing, work force development, job creation, and energy savings. 

Dr. Veliadis has given over 60 invited presentations/keynotes/tutorials, and is an IEEE Fellow and an IEEE EDS Distinguished Lecturer. He has 25 issued US patents, 3 book chapters, and 115 peer-reviewed technical publications to his credit. Dr. Veliadis is also Professor in Electrical and Computer Engineering at North Carolina State University. He received the Ph.D. degree in Electrical and Computer Engineering from Johns Hopkins University in 1995. Prior to being named Deputy Executive Director and CTO of Power America, Dr. Veliadis spent 21 years in the semiconductor industry where his work included design, fabrication, and testing of SiC SITs, JFETs, MOSFETs, Thyristors, and JBS, Schottky, and PiN diodes in the 1-12 kV range.

 

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